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Fundamental Aspects of Silicon Oxidation
By:Yves J. Chabal
Published on 2001-04-24 by Springer Science & Business Media

This book brings forth fundamental aspects of silicon oxidation that are key to understanding the nature of ultra-thin oxides used in microelectronics. From the wet chemical pre-cleans prior to oxidation to oxygen diffusion in oxides, the chemical, structural and kinetic elements of oxidation are presented in a tutorial fashion at both an experimental and theoretical level. Experimental results are based on powerful techniques such as photon/electron spectroscopy, ion scattering and electron/tunneling microscopy. The theories, based on first principles, focus on atomic scale processes related to silicon oxidation. In contrast to previous books dealing with the structural and electronic properties of silicon oxide, this book is solely devoted to the formation and evolution of silicon oxide, including its nitridation.
This Book was ranked at 3 by Google Books for keyword Aspects.
Book ID of Fundamental Aspects of Silicon Oxidation's Books is sV4y2-mWGNIC, Book which was written byYves J. Chabalhave ETAG "dNaP5WNb3Bc"
Book which was published by Springer Science & Business Media since 2001-04-24 have ISBNs, ISBN 13 Code is 9783540416821 and ISBN 10 Code is 354041682X
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Book which have "260 Pages" is Printed at BOOK under CategoryScience
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